Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
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High Power Gain: | Gpe>=7.5dB @Vcc=13.5V, Po=14W, F=175MHz | Package: | TO-220 |
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High Light: | multi emitter transistor,silicon power transistors |
NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972
DESCRIPTION:
The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications.
FEATURES INCLUDE:
• Replaces Original 2SC1972 in Most Applications
• High Gain Reduces Drive Requirements
• Economical TO-220 Package
IC | 3.5 A |
VCBO | 35 V |
PDISS | 25 W @ TC = 25 °C |
TSTG | -55 °C to +175 °C |
θJC | 6.0 °C/W |
SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNITS |
BVCEO | IC = 50 mA | 17 | V | ||
BVCBO | IC = 10 mA | 35 | V | ||
BVEBO | IC = 10 mA | 4.0 | V | ||
ICBO | VCES = 25 V | 100 | µA | ||
IEBO | VEB = 3.0 V | 500 | µA | ||
hFE | VCE = 10 V IC = 100 mA | 10 | 50 | 180 | --- |
ηC POUT |
VCC = 13.5 V PIN = 2.5 W f =175 MHz |
60 14 |
70 15 |
% W |
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